Datasheet ISOSD61 (STMicroelectronics) - 6

ISOSD61 Device specifications Table 5. Absolute maximum ratings Parameter Symbol Min. Max. Units
Storage temperature TS -55 150 °C Operating temperature TA -40 125 °C Supply voltage VDD, VDDISO -0.3 6 V Steady-state input V voltage IN+, VIN- -0.3 VDDISO + 0.5 V Digital input/output MDAT+, MDAT- -0.3 3.6 V voltages MCLKIN+, MCLKIN- Lead solder 260 for 10 s. °C temperature
Table 6. Recommended Operating Conditions Parameter Symbol Min. Max. Units
Ambient operating temperature TA -40 125 °C VDD supply voltage VDD 3 5.5 V VDDISO supply voltage VDDISO 4.5 5.5 V Analog input voltage VIN+, VIN- -200 200 mV
Table 7. Electrical specifications
VDD=3 V to 5.5 V, VDDISO = 4.5 to 5.5 V, VIN+ = -200 mV to +200 mV, TA=-40 to 125 °C, fMCLKIN=5 to 25MHz unless otherwise noted.
Parameter Symbol Min. Typ. Max. Units Test conditions STATIC CHARACTERISTICS
with SINC3 filterwith OSR=256 and Resolution 16 bits VIN+-VIN-=200 mV Integral nonlinearity INL ±3 LSB Differential nonlinearity DNL ±0.2 LSB No missing codes Offset error VVOS -0.8 mV Offset drift vs. temperature TCVVOS 1.5 4.5 µV/°C Offset drift vs. VDDISO 200 µV/V Gain error GE ±1.0 % Gain error drift vs. TCG Temperature E 60 ppm/°C Gain error drift vs. VDDISO 600 µV/V
ANALOG INPUTS
Full-scale differential voltage input FSR -320 +320 mV V range IN = VIN+ – VIN- IINA –0.5 µA VDDISO = 5V, VDD = 5V, VIN+ = 0 V; Average input bias current V I DDISO = 5 V, VDD = 5 V, VIN+ = 300 INA 40 50 µA mV; Input capacitance CINA 10 pF Across VIN+ or VIN- to GNDISO
DYNAMIC CHARACTERISTICS DS13605
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Rev 3 page 6/23
Document Outline Cover image Product status link / summary Features Application Description 1 Device overview 2 Pin description 3 Device specifications 4 Terminology 5 Theory of operation 6 Package description 7 Ordering information Revision history Contents List of tables List of figures