Data SheetHMC8142SPECIFICATIONS TA = 25°C, VDDx = 4 V, IDD = 450 mA, unless otherwise noted. Table 1. ParameterMinTypMaxUnit OPERATING CONDITIONS Radio Frequency (RF) Range 81 86 GHz PERFORMANCE Gain 19 21 dB Gain Variation over Temperature 0.02 dB/°C Output Power for 1 dB Compression (P1dB) 22.5 25 dBm Saturated Output Power (PSAT) 26 dBm Output Third-Order Intercept (OIP3) at Maximum Gain1 29 dBm Input Return Loss 12 dB Output Return Loss 8 dB POWER SUPPLY Total Supply Current (IDD)2 450 mA 1 Data taken at output power (POUT) = 12 dBm/tone, 1 MHz spacing. 2 Adjust VGGx from −2 V to 0 V to achieve the total drain current, IDD = 450 mA. Rev. A | Page 3 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
