Datasheet AD812 (Analog Devices) - 5

AD812 ABSOLUTE MAXIMUM RATINGS1 MAXIMUM POWER DISSIPATION
Supply Voltage . ± 18 V The maximum power that can be safely dissipated by the Internal Power Dissipation2 AD812 is limited by the associated rise in junction temperature. Plastic (N) . 1.3 Watts The maximum safe junction temperature for the plastic encap- Small Outline (R) . 0.9 Watts sulated parts is determined by the glass transition temperature Input Voltage (Common Mode) . ± VS of the plastic, about 150°C. Exceeding this limit temporarily Differential Input Voltage . ± 1.2 V may cause a shift in parametric performance due to a change in Output Short Circuit Duration the stresses exerted on the die by the package. Exceeding a . Observe Power Derating Curves junction temperature of 175°C for an extended period can result Storage Temperature Range N, R . –65°C to +125°C in device failure. Operating Temperature Range . –40°C to +85°C While the AD812 is internally short circuit protected, this may Lead Temperature Range (Soldering, 10 sec) . +300°C not be sufficient to guarantee that the maximum junction tem- NOTES perature (150 degrees) is not exceeded under all conditions. To 1Stresses above those listed under Absolute Maximum Ratings may cause perma- ensure proper operation, it is important to observe the derating nent damage to the device. This is a stress rating only; functional operation of the curves. device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating It must also be noted that in high (noninverting) gain configura- conditions for extended periods may affect device reliability. 2 tions (with low values of gain resistor), a high level of input Specification is for device in free air: 8-lead plastic package: θJA = 90°C/Watt; overdrive can result in a large input error current, which may 8-lead SOIC package: θJA = 150°C/Watt. result in a significant power dissipation in the input stage. This
ORDERING GUIDE
power must be included when computing the junction tempera- ture rise due to total internal power.
Temperature Package Package Model Range Description Option 2.0 TJ = +150
8
C
AD812AN –40°C to +85°C 8-Lead Plastic DIP N-8
8-LEAD MINI-DIP PACKAGE
AD812AR –40°C to +85°C 8-Lead Plastic SOIC SO-8 AD812AR-REEL 13" Reel
1.5
AD812AR-REEL7 7" Reel
METALIZATION PHOTO 1.0
Dimensions shown in inches and (mm).
8-LEAD SOIC PACKAGE 0.0783 0.5 (1.99) V+ OUT2 –IN2 8 7 6 MAXIMUM POWER DISSIPATION – Watts 0 5 +IN2 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE –
8
C
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
0.0539 (1.37) 4 V– 1 2 3 4 OUT1 –IN1 +IN1 V– CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
WARNING!
accumulate on the human body and test equipment and can discharge without detection. Although the AD812 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
ESD SENSITIVE DEVICE
precautions are recommended to avoid performance degradation or loss of functionality. REV. B –5–