Datasheet NCL30000 (ON Semiconductor) - 10

NCL30000 TYPICAL CHARACTERISTICS
6.0 170 Y (ns) 160 5.5 150 TAGE (V) TION DELA 140 5.0 AGA 130 , Ct PEAK VOL 120 AX) 4.5 M , PWM PROP 110 V Ct( 4.0 t PWM 100 −50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Figure 14. Ct Peak Voltage vs. Junction Figure 15. PWM Propagation Delay vs. Temperature Junction Temperature
0.520 220 0.515 0.510 210 0.505 TAGE THRESHOLD (V) 0.500 200 TION (ns) 0.495 DURA 0.490 190 , LEADING EDGE BLANKING 0.485 t LEB 0.480 180 , CURRENT SENSE VOL −50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125 V ILIM TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Figure 16. Current Sense Voltage Threshold Figure 17. Leading Edge Blanking Duration vs. vs. Junction Temperature Junction Temperature
205 18 ms) 200 16 ) ROH 195 W 14 12 190 ANCE ( 10 185 8 180 6 ROL 175 4 , MAXIMUM OFF TIME IN AB- t DRIVE RESIST 170 2 t star SENCE OF ZCD TRANSITION ( 165 0 −50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Figure 18. Maximum Off Time in Absence of Figure 19. Drive Resistance vs. Junction ZCD Transition vs. Junction Temperature Temperature http://onsemi.com 9