Datasheet BDX33C (ON Semiconductor) - 2

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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
80 TTS) A 60 TION (W A 40 20 , POWER DISSIP DP 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) BDX33B/BDX34B 80 − BDX33C/BDX34C 100 − Collector−Emitter Sustaining Voltage (Note 1) VCER(sus) Vdc (IC = 100 mAdc, IB = 0, RBE = 100) BDX33B/BDX34B 80 − BDX33C/BDX33C 100 − Collector−Emitter Sustaining Voltage (Note 1) VCEX(sus) Vdc (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B 80 − BDX33C/BDX34C 100 − Collector Cutoff Current ICEO mAdc (VCE = 1/2 rated VCEO, IB = 0) TC = 25°C − 0.5 TC = 100°C − 10 Collector Cutoff Current ICBO mAdc (VCB = rated VCBO, IE = 0) TC = 25°C − 1.0 TC = 100°C − 5.0 Emitter Cutoff Current IEBO − 10 mAdc (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1) hFE 750 − − (IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C Collector−Emitter Saturation Voltage VCE(sat) − 2.5 Vdc (IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C Base−Emitter On Voltage VBE(on) − 2.5 Vdc (IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C Diode Forward Voltage VF − 4.0 Vdc (IC = 8.0 Adc) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.
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