link to page 12 link to page 4 link to page 12 link to page 12 Data Sheet ADRF5010 Silicon SPST Switch, Nonreflective, 100 MHz to 55 GHz FEATURESFUNCTIONAL BLOCK DIAGRAM ► Ultra-wideband frequency range: 0.1 GHz to 55 GHz ► Nonreflective ports, high-power terminated path ► Symmetrical ports ► Low insertion loss ► 1.0 dB typical to 20 GHz ► 1.5 dB typical to 40 GHz ► 2.0 dB typical to 55 GHz ► Isolation ► 30 dB typical to 50 GHz ► 28 dB typical to 55 GHz ► High input linearity ► P0.1dB: >33 dBm typical ► Input IP3 >60 dBm typical Figure 1. Functional Block Diagram ► High power handling TCASE= 85 °C ► Through path GENERAL DESCRIPTION ► Peak: 36 dBm The ADRF5010 is a nonreflective, single-pole single-throw (SPST) ► Pulse: 33 dBm switch manufactured in the silicon process. ► CW: 30 dBm ► Terminated path The ADRF5010 operates from 0.1 GHz to 55 GHz with insertion loss of lower than 2 dB and isolation of higher than 28 dB. The ► Peak: 33 dBm device has an RF input power handling capability of 30 dBm for ► Pulse 33 dBm through path and 30 dBm for hot switching. ► CW: 30 dBm The ADRF5010 requires dual-supply voltages of ±3.3 V. The device ► Hot switching employs CMOS- and LVTTL-compatible controls. ► Peak: 33 dBm ► Pulse: 33 dBm The ADRF5010 can also operate with a single positive supply volt- ► CW: 30 dBm age (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is ► Complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible controls maintained while the switching characteristics, linearity, and power handling performance is derated. See Table 2 for more details. ► Radio frequency (RF) switching time: 30 ns ► RF settling time (0.1 dB final RF output): 50 ns The ADRF5010 comes in a 14-lead, 2.25 mm x 2.25 mm, land grid array (LGA) package and can operate from -40°C to +105°C. ► Dual-supply operation: ±3.3 V ► 14-lead, 2.25 mm x 2.25 mm, LGA package APPLICATIONS ► Test and instrumentation ► Cellular infrastructure: 5G mmWave ► Military radios, radars, electronic countermeasures ► Microwave radios and very small aperture terminals ► Industrial scanners Rev. 0DOCUMENT FEEDBACK Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and TECHNICAL SUPPORT registered trademarks are the property of their respective owners. Document Outline Features Applications Functional Block Diagram General Description Specifications Single-Supply Operation Absolute Maximum Ratings Thermal Resistance Power Derating Curves Electrostatıc Dıscharge (ESD) Ratıngs ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Insertion Loss, Return Loss, and Isolation Input Power Compression and Third-Order Intercept Theory of Operation RF Input And Output Applications Information Evaluation Board Recommendatıons For Printed Circuit Board Design Outline Dimensions Ordering Guide Evaluation Boards
