Datasheet ZVN3306A (Diodes)

N-CHANNEL ENHANCEMENT ZVN3306A MODE VERTICAL DMOS FET ZVN3306A ISSUE 2 – MARCH 94 TYPICAL CHARACTERISTICS
FEATURES * 60 Volt VDS VGS=10V 9V * R =5Ω DSon) 1.0 10 8V olts) (Amps)t 0.8 8 7V D G S 0.6 6V 6 oltage (V ID= V
E-Line
1A 0.4 5V 4
TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
4V 0.2 2 0.5A PARAMETER SYMBOL VALUE UNIT -On-State Drain Curren 3V Drain Source 0.25A ) Drain-Source Voltage V n DS- DS 60 V 0 V 0 D(O 0 2 4 6 8 10 0 2 4 6 8 10 Continuous Drain Current at Tamb=25°C ID 270 mA I VDS - Drain Source Voltage (Volts) VGS -Gate Source Voltage (Volts) Pulsed Drain Current IDM 3 A
Saturation Characteristics Voltage Saturation Characteristics
Gate-Source Voltage V ± GS 20 V Power Dissipation at Tamb=25°C Ptot 625 mW ) Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ps) 1.0 (Ω e 10 VDS=10V c Am n t ( ta
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
n 0.8 e is r PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Res 5 0.6 e ID= Drain-Source Breakdown BV 1A DSS 60 V ID=1mA, VGS=0V urc 0.5A Voltage Drain Cur e 0.4 0.25A tat in So Gate-Source Threshold VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS S ra 0.2 Voltage On- -D - ) N) Gate-Body Leakage I n (O 1 GSS 20 nA VGS=± 20V, VDS=0V O 0 DS D( 0 2 4 6 8 10 1 10 20 I R Zero Gate Voltage Drain I µ DSS 0.5 A VDS=60V, VGS=0 Current 50 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) µA VDS=48V, VGS=0V, T=125°C(2)
Transfer Characteristics
On-State Drain Current(1) I
On-resistance vs gate-source voltage
D(on) 750 mA VDS=18V, VGS=10V Static Drain-Source On-State RDS(on) 5 Ω VGS=10V,ID=500mA Resistance (1) 2.4 Forward Transconductance(1)(2gfs 150 mS VDS=18V,ID=500mA ) 200 h 2.2 ID=-0.5A t )
on)
S( 180 G 2.0 nce (mS)
nce RDS(
160 Input Capacitance (2) C 1.8 cta iss 35 pF nd V
esista
140 a 1.6
e R
ndu 120 VDS=18V Common Source Output Coss 25 pF VDS=18V, VGS=0V, f=1MHz o 1.4
ourc
100 Capacitance (2)
n-S
DS(on)
ai
1.2 nsc
Dr
a 80 R r d 60 Reverse Transfer Capacitance C 1.0 T rss 8 pF e s d 40 (2) 0.8
Gate
ali
Threshold Voltage V
war m 0.6
GS(th)
r 20 Turn-On Delay Time (2)(3) td(on) 5 ns Nor 0.4 -Fo 0 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 fs g 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Rise Time (2)(3) tr 7 ns V ≈ DD 18V, ID=500mA T-Temperature (C°) ID(on) - Drain Current (Amps) Turn-Off Delay Time (2)(3) td(off) 6 ns
Normalised R Transconductance v drain current DS(on) and VGS(th) vs Temperature
Fall Time (2)(3) tf 8 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% 3-376 3-375 ( 2) Sample test.