Datasheet MMBT2369A (ON Semiconductor) - 2

MMBT23 69A — NPN Sw MMBT2369A NPN Switching Transistor itching T
3
r Description ansistor
This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. 2 Sourced from process 21. SOT-23 1 1. Base 2. Emitter 3. Collector
Ordering Information Part Number Marking Package Packing Method
MMBT2369A 1S SOT-23 3L Tape and Reel
Absolute Maximum Ratings
(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations. © 1997 Semiconductor Components Industries, LLC. Publication Order Number: MMBT2369A/D October-2017, Rev. 2