Philips SemiconductorsProduct specificationNPN Darlington transistorsBDX42; BDX43; BDX44FEATURESPINNING • High current (max. 1 A) PINDESCRIPTION • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector, connected to metal part of mounting surface APPLICATIONS 3 base • Industrial switching applications such as: – print hammers – solenoids handbook, halfpage – relay and lamp drivers. 2 3 DESCRIPTION NPN Darlington transistor in a TO-126; SOT32 plastic package. PNP complements: BDX45 and BDX47. 1 123 Top view MAM349 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATASYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT VCBO collector-base voltage open emitter BDX42 − − 60 V BDX43 − − 80 V BDX44 − − 90 V VCES collector-emitter voltage VBE = 0 BDX42 − − 45 V BDX43 − − 60 V BDX44 − − 80 V IC collector current (DC) − − 1 A Ptot total power dissipation Tamb ≤ 25 °C − − 1.25 W Tmb ≤ 100 °C − − 5 W hFE DC current gain IC = 150 mA; VCE = 10 V 1000 − − IC = 500 mA; VCE = 10 V 2000 − − fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − MHz 1997 Jul 02 2 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT32 DEFINITIONS