SFH6156www.vishay.com Vishay Semiconductors 1.2 104 D = 0 t 0.005 p 25° 0.01 t D= p I 50° F 0.02 T 0.05 75° T 0.1 1.1 103 (V) (mA) F I F V 1.0 102 0.2 0.5 Pulse cycle D = parameter DC 0.9 101 10- 1 100 101 102 10- 5 10- 4 10- 3 10- 2 10- 1 100 101 t (s) isfh615a_05 I (mA) isfh615a_07 p F Fig. 6 - Diode Forward Voltage (typ.) vs. Forward Current Fig. 8 - Permissible Pulse Handling Capability Forward Current vs. Pulse Width 20 f = 1 MHz 15 10 C (pF) CCE 5 0 10-2 10-1 100 101 102 isfh615a_06 V (V) e Fig. 7 - Transistor Capacitance (typ.) vs. Collector Emitter Voltage
PACKAGE DIMENSIONS(in millimeters) 0.76 2.54 R0.25 1.78 6.48 6.81 8 min. 1.52 11.05 9.53 ISO method A 10.03 4.55 4.83 7.52 0.76 7.90 1.14 0.79 typ. 10° 3.30 0.25 typ. Pin 1 identification 3.81 Lead coplanarity 0.004 max. 8 min. 4° typ. 0.249 0.102 2.54 typ. 0.508 3° to 7° 1.02 1.27 typ. Rev. 3.0, 15-Mar-2023
6Document Number: 83671 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000