Datasheet MOC3051M, MOC3052M, MOC3053M (ON Semiconductor) - 4

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MOC3051M, MOC3052M, MOC3053M ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) (continued)
INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Characteristic Test Conditions Min Typ Max Unit ISOLATION CHARACTERISTICS
VISO Input−Output Isolation Voltage (Note 3) f = 60 Hz, t = 1 Minute 4170 VACRMS RISO Isolation Resistance VI−O = 500 VDC 1011 W CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF 1. Test voltage must be applied within dv/dt rating. 2. All devices will trigger at an IF value greater than or equal to the maximum IFT specification. For optimum operation over temperature and lifetime of the device, the LED should be biased with an IF that is at least 50% higher than the maximum IFT specification. The IF should not exceed the absolute maximum rating of 60 mA. Example: For MOC3052M, the minimum IF bias should be 10 mA x 150% = 15 mA. 3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common.
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