MB2S, MB4S, MB6Swww.vishay.com Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS(TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MB2S MB4S MB6S UNITMaximum instantaneous forward I voltage per diode F = 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking TA = 25 °C 5.0 I μA voltage per diode R TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
THERMAL CHARACTERISTICS(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2S MB4S MB6S UNITRJA (1) 85 Typical thermal resistance R (2) JA 70 °C/W RJL (1) 20
Notes(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION(Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODEMB2S-E3/45 0.22 45 100 Tube MB2S-E3/80 0.22 80 3000 13" diameter paper tape and reel Revision: 04-Aug-2020
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