Datasheet LME49710 (National Semiconductor) - 8
Производитель | National Semiconductor |
Описание | High Performance, High Fidelity Audio Operational Amplifier |
Страниц / Страница | 28 / 8 — THD+N vs Frequency. = 15V, V. = –15V,. = 17V, V. = –17V,. R = 2k. , V. = … |
Формат / Размер файла | PDF / 840 Кб |
Язык документа | английский |
THD+N vs Frequency. = 15V, V. = –15V,. = 17V, V. = –17V,. R = 2k. , V. = 3V. OUT. RMS. LME49710. R = 10k
Модельный ряд для этого даташита
Текстовая версия документа
THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R = 2k
Ω
, V = 3V R = 2k
Ω
, V = 3V L OUT RMS L OUT RMS LME49710
20210464 20210467
THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R
= 600Ω
, V = 3V R
= 600Ω
, V = 3V L OUT RMS L OUT RMS
20210466 20210469
THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R = 10k
Ω
, V = 3V R = 10k
Ω
, V = 3V L OUT RMS L OUT RMS
20210465 20210468 www.national.com 8 Document Outline LME49710 General Description Key Specifications Features Applications Typical Application FIGURE 1. Passively Equalized RIAA Phono Preamplifier Connection Diagrams Absolute Maximum Ratings Electrical Characteristics Typical Performance Characteristics Application Hints Noise Measurement Circuit Typical Applications Application Information DISTORTION MEASUREMENTS FIGURE 2. THD+N and IMD Distortion Test Circuit Revision History Physical Dimensions