Datasheet NCS2005 (ON Semiconductor) - 5

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NCS2005 Table 7. ELECTRICAL CHARACTERISTICS AT 2.7 V SUPPLY
Unless otherwise noted, values are referenced to TA = 25°C, V+ = 2.7 V, V− = 0 V, VCM = V+/2, and RL ≥ 1 MW to V+/2.
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limits apply from TA = −40°C to 125°C, unless otherwise noted. (Notes 12, 13)
Parameter Test Conditions Symbol Min Typ Max Units SUPPLY CHARACTERISTICS
Quiescent Supply Current No load IS 1.25 mA Power Supply Rejection Ratio VS = 2.7 V to 30 V PSRR
70
113 dB
INPUT CHARACTERISTICS
Input Offset Voltage VOS 0.2 6 mV
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Input Offset Voltage Drift DV/DT 1 mV/°C Input Bias Current VCM = 0 V IIB 45 nA VCM = 2.7 V 45 Input Offset Current VCM = 0 V IOS 2 nA VCM = 2.7 V 2 Input Resistance RIN 90 MW Input Capacitance CIN 3 pF Common Mode Rejection Ratio VCM = V− to V+ CMRR 58 96 dB
OUTPUT CHARACTERISTICS
High−Level Output Voltage IL = 2.7 mA VOH 2.50 2.60 V Low−Level Output Voltage IL = 2.7 mA VOL 100 130 mV Output Current Capability Sourcing current IOUT 12 mA Sinking current 20
DYNAMIC PERFORMANCE
Open Loop Voltage Gain RL = 10 kW AVOL 73 114 dB Gain−Bandwidth Product RL = 10 kW GBWP 8.5 MHz Gain Margin RL = 10 kW AM 6 dB Phase Margin RL = 10 kW yM 60 ° Slew Rate RL = 10 kW SR 2.6 V/ms Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW THD+n 0.05 %
NOISE PERFORMANCE
Voltage Noise Density f = 1kHz eN 45 nV/√Hz 12.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 13.Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C.
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