Datasheet TSV782 (STMicroelectronics) - 4

TSV782 Electrical characteristics 3 Electrical characteristics Table 4. Electrical characteristics at VCC = 5 V, Vicm = VOUT = VCC / 2, T = 25 °C, CL = 47 pF and RL = 10 kΩ connected to VCC / 2 (unless otherwise specified). Symbol Parameter Conditions Min. Typ. Max. Unit DC performance
T = 25 °C ± 50 ± 200 Vio Input offset voltage µV -40 °C ≤ T ≤ 125 °C ± 700 ∆Vio/∆T Input offset voltage -40 °C ≤ T ≤ 125 °C ± 5 µV/°C temperature drift T = 25 °C 2 5 Iib Input bias current pA -40 °C ≤ T ≤ 125 °C 75 300 T = 25 °C 1 5 Iio Input offset current pA -40 °C ≤ T ≤ 125 °C 20 300 VCC- + 100 mV ≤ VOUT ≤ VCC+ - 100 mV, 110 133 T = 25 °C VCC- + 100 mV ≤ VOUT ≤ VCC+ - 100 mV, 95 113 -40 °C ≤ T ≤ 125 °C AVD Open loop gain dB VCC- + 300 mV ≤ VOUT ≤ VCC+ - 300 mV, 105 130 RL = 600 Ω, T = 25 °C VCC- + 300 mV ≤ VOUT ≤ VCC+ - 300 mV, 85 RL = 600 Ω, -40 °C ≤ T ≤ 125 °C VCC- - 100 mV ≤ Vicm ≤ VCC+ - 1.8 V, T = 25 °C 98 120 CMR1 V dB CC- - 100 mV ≤ Vicm ≤ VCC+ - 1.8 V, Common-mode rejection ratio 90 120 -40 °C ≤ T ≤ 125 °C 20.log (∆Vio/∆Vicm) VCC- -100 mV ≤ Vicm ≤ VCC+, T = 25 °C 80 100 CMR2 dB VCC- -100 mV ≤ Vicm ≤ VCC+, -40 °C ≤ T ≤ 125 °C 76 92 2.0 V ≤ VCC ≤ 5.5 V, T = 25 °C, Vicm = 0 V 90 110 Supply-voltage rejection ratio SVR 2.0 V ≤ VCC ≤ 5.5 V, -40 °C ≤ T ≤ 125 °C, dB 20.log (∆Vio/∆VCC) 90 110 Vicm = 0 V High level output voltage drop T = 25 °C 10 VOH mV (VOH = VCC+ - VOUT) -40 °C ≤ T ≤ 125 °C 20 Low level output voltage drop T = 25 °C 10 VOL mV (VOL = VOUT) -40 °C ≤ T ≤ 125 °C 20 RL connected to VCC+, T = 25 °C 55 70 ISINK RL connected to VCC+, -40 °C ≤ T ≤ 125 °C 37 IOUT mA RL connected to VCC-, T = 25 °C 55 60 ISOURCE RL connected to VCC-, -40 °C ≤ T ≤ 125 °C 45 T = 25 °C 3.3 3.7 I Supply current (by operational CC mA amplifier) -40 °C ≤ T ≤ 125 °C 3.7
AC performance
GBP Gain bandwidth product RL = 10 kΩ 23 30 MHz
DS14011
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Rev 2 page 4/31
Document Outline Features Applications Description 1 Pin description 1.1 TSV782 dual operational amplifier 2 Absolute maximum ratings and operating conditions 3 Electrical characteristics 4 Typical performance characteristics 5 Application information 5.1 Operating voltages 5.2 Input offset voltage drift over the temperature 5.3 Long term input offset voltage drift 5.4 Unused channel 5.5 EMI rejection 5.6 Maximum power dissipation 5.7 Capacitive load and stability 5.8 Resistor values for high speed op amp design 5.9 PCB layout recommendations 5.10 Decoupling capacitor 5.11 Macromodel 6 Typical applications 6.1 Low-side current sensing 6.2 Photodiode transimpedance amplification 7 Package information 7.1 DFN8 2x2 package information 7.2 MiniSO8 package information 7.3 SO8 package information 8 Ordering information Revision history