Datasheet MBR2090CT-M3, MBR20100CT-M3 (Vishay)

MBR2090CT-M3, MBR20100CT-M3
www.vishay.com Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES
• Trench MOS Schottky technology
TMBS ®
• Lower power losses, high efficiency
TO-220AB
• Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 2 1
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power PIN 1 PIN 2 supplies, freewheeling diodes, DC/DC converters or polarity PIN 3 CASE protection application.
MECHANICAL DATA PRIMARY CHARACTERISTICS Case:
TO-220AB IF(AV) 2 x 10 A Molding compound meets UL 94 V-0 flammability rating V Base P/N-M3 - halogen-free, RoHS-compliant, and RRM 90 V, 100 V commercial grade IFSM 150 A V
Terminals:
Matte tin plated leads, solderable per F 0.65 V J-STD-002 and JESD 22-B102 TJ max. 150 °C M3 suffix meets JESD 201 class 1A whisker test Package TO-220AB
Polarity:
As marked Diode variation Common cathode
M

ounting Torque:
10 in-lbs max.
MAXIMUM RATINGS
(TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2090CT MBR20100CT UNIT
Max. repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Max. DC blocking voltage VDC 90 100 V total device 20 Max. average forward rectified current at TC = 133 °C IF(AV) A per diode 10 Peak forward surge current 8.3 ms single half sine-wave  I superimposed on rated load per diode FSM 150 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG -65 to +150 °C Revision: 11-May-16
1
Document Number: 89192 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000