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Datasheet Si1308EDL (Vishay) - 6

ПроизводительVishay
ОписаниеN-Channel 30 V (D-S) MOSFET
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Si1308EDL. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient

Si1308EDL TYPICAL CHARACTERISTICS Normalized Thermal Transient Impedance, Junction-to-Ambient

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Si1308EDL
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 ient s 0.2 ran T 0.1 Notes: fective Impedance 0.1 Ef PDM 0.05 Thermal t1 0.02 t2 t1 1. Duty Cycle, D = Normalized t2 2. Per Unit Base = RthJA = 360 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 ient s 0.2 ran T 0.1 fective Impedance Ef 0.1 0.05 Thermal 0.02 Normalized Single Pulse 0.01 10-3 10-2 10-1 10-4 1 0 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63399. S14-1997-Rev. C, 06-Oct-14
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Document Number: 63399 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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