Datasheet TLP5212 (Toshiba) - 8

TLP5212
12. Application Information * ** Fig 12.1 Recommended application circuit with positive gate drive, desaturation detection and active Miller Clamp * ** Fig 12.2 Recommended application circuit with negative gate drive, external booster transistors and desaturation detection
Note : Bypass capacitors (1 μF) must be connected between pin 13 (VCC2) and 16 (VE) to stabilize the operation of the high gain linear amplifier. When VE – VEE > 0 V (with negative gate drive), another bypass capacitor (1 μF) must be connected between pin 9 or 12 (VEE) and 16 (VE). Failure to provide the bypassing may impair the switching property. The total lead length between each capacitor and the coupler should not exceed 1 cm. Refer to the connection of pin 14 and pin 16 for a desaturation detection function. The desaturation diode DDESAT 600V / 1200V fast recovery type and capacitor CBLANK are external components required for fault detection circuits. Also, select a resistance RDESAT of 500 ohms or more for protection of DESAT pin 14. For details, refer to the application note "Smart Gate Driver Coupler Tips for Designing DESAT Detection Circuits". ＊ : Zener diode for DESAT pin protection. CUZ8V2 is recommended. ＊＊ : Schottky diode for DESAT false detection prevention. CUS05F30 is recommended. ©2022 8 2022-03-02 Toshiba Electronic Devices & Storage Corporation. Rev.1.0