Datasheet MPSH81, MMBTH81 (ON Semiconductor) - 4

MPSH81 / MMBTH81 PNP RF Transistor
(continued)
Typical Characteristics
(continued)
Base-Emitter Saturation Base-Emitter ON Voltage ) (V Voltage vs Collector Current V) vs Collector Current E E ( G
-1.6 1
G V = 10V A I = 10 I C B A CE T L T L T = A 25 A °C O
-1.4 0.8
. V VO T A N
-1.2
S O
0.6
T = A 100°C ER ER T
- 1
T = A - 55°C T IT IT M M
0.4
E
-0.8
E - SE SE- T = A 25°C A A
0.2 -0.6
- B T = 125°C A - B ) ) T N AS
-0.4
(O
0
(
0.1
- -
1
-
10
-
100
BE -
0.1
-
1
-
10
-
100
BE V C V I - COLLECTOR CURRENT (mA) C I - COLLE CTOR CURRENT (mA) Collector Reverse Current Input / Output Capacitance ) vs Ambient Temperature vs Reverse Bias Voltage (nA T
100 3
N E
2.8
f = 1.0 MHz R R U )
2.6
F
10
C p
2.4
E ( S E R
2.2
E V = -6.0V CE NC V
1
A
2
E T R CI
1.8
C o R V = -3.0V CE A bo O
1.6
T AP
0.1
C C E
1.4
C ibo L L
1.2
O
0.01
C
1
- S
25 50 75 100 125 150 0 -2 -4 -6 -8 -10
CE T A - AM BIENT TE MPE RATURE ( °C) I REVERSE BIAS VOLTAGE (V) Contours of Constant Gain Power Dissipation vs Bandwidth Product (f ) Ambient Temperature T
-14
)
350
) V W E (
-12
m
300
G TO-92 A N ( T
-10
L IO
250
T A VO
-8
IP
200
R 1500 MHz O SS SOT-23 T
-6
1200 MHz DI
150
EC R L E L
-4 100
500 MHz W O 200 MHz - CO
-2
P
50
200 MHz 500 MHz - 900 MHz D V CE P
0 0
-
0.1
-
1
-
10
-
100 0 25 50 75 100 125 150
I - C COLL ECTOR CURRENT (mA) TEMPERATURE ( C) °
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