Datasheet 2N5087 (ON Semiconductor) - 3

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2N5087 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 50 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) 50 − Collector Cutoff Current ICBO nAdc (VCB = 35 Vdc, IE = 0) − 50 Emitter Cutoff Current IEBO nAdc (VEB = 3.0 Vdc, IC = 0) − 50
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 100 mAdc, VCE = 5.0 Vdc) 250 800 (IC = 1.0 mAdc, VCE = 5.0 Vdc) 250 − (IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1) 250 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.3 Base−Emitter On Voltage VBE(on) Vdc (IC = 1.0 mAdc, VCE = 5.0 Vdc) − 0.85
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) 40 − Collector−Base Capacitance Ccb pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.0 Small−Signal Current Gain hfe − (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 250 900 Noise Figure NF dB (IC = 20 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 10 Hz/15.7 kHz) − 2.0 (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz) − 2.0 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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