Datasheet BC337, BC337-25, BC337-40 (ON Semiconductor)

link to page 4 BC337, BC337-25, BC337-40 Amplifier Transistors
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• These are Pb−Free Devices COLLECTOR 1
MAXIMUM RATINGS
2 BASE
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 45 Vdc 3 Collector − Base Voltage V EMITTER CBO 50 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C
TO−92
Total Device Dissipation @ TC = 25°C PD 1.5 W
CASE 29
Derate above 25°C 12 mW/°C
STYLE 17
Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range 1 1 2 2 3 3
THERMAL CHARACTERISTICS
STRAIGHT LEAD BENT LEAD
Characteristic Symbol Max Unit
BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the
MARKING DIAGRAM
device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. BC33 7−xx AYWW G G BC337−xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
ORDERING INFORMATION
Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
November, 2013 − Rev. 8 BC337/D