NPN 2N3019 – 2N3020 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO VCBO VEBO hFE VCE(SAT) VBE(SAT) Ratings Test Condition(s) VCB =950 V IE =0 Collector Cutoff Current VCB =90 V, IE =0 Tj =150°C VEB =5 V Emitter Cutoff Current IC =0 Collector Emitter Breakdown IC =10 mA Voltage IB =0 Collector Base Breakdown IC =100 µA Voltage IE =0 Emitter Base Breakdown IE =100 µA Voltage IC =0 IC =0.1 mA VCE =10 V IC =10 mA VCE =10 V IC =150 mA VCE =10 V DC Current Gain (*) IC =500 mA VCE =10 V IC =1 A VCE =10 V IC =150 mA VCE =10 V Tamb = -55°C IC =150 mA Collector-Emitter saturation IB =15 mA Voltage (*) IC =500 mA IB =50 mA Base-Emitter saturation IC =150 mA IB =15 mA Voltage (*) 16/10/2012 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3019 2N3020 2N3019 2N3020 2N3019 COMSET SEMICONDUCTORS Min Typ Max Unit -10 nA -10 µA -10 nA 80 -V 140 -V 7 -V 50 30 90 40 100 40 50 30 -100 120 300 120 100 15 -40 -0.2 -0.5 -1.1 -V 2/4
Купить 2N3019 на РадиоЛоцман.Цены — от 47 до 1 498 ₽
