Datasheet Si2369DS (Vishay) - 2

Si2369DS
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -30 - - V VDS temperature coefficient VDS/TJ - -19 - ID = -250 μA mV/°C VGS(th) temperature coefficient VGS(th)/TJ - 4 - Gate-source threshold voltage VGS(th) VDS = VGS , ID = -250 μA -1.2 - -2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = -30 V, VGS = 0 V - - -1 Zero gate voltage drain current IDSS μA VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -5 On-state drain current a I  D(on) VDS -5 V, VGS = -10 V -25 - - A VGS = -10 V, ID = -5.4 A - 0.024 0.029 Drain-source on-state resistance a R VGS = -6 V, ID = -5 A - 0.028 0.034 DS(on) VGS = -4.5 V, ID = -4.6 A - 0.033 0.040 Forward transconductance a gfs VDS = -15 V, ID = -5.4 A - 18 - S
Dynamic b
Input capacitance Ciss - 1295 - Output capacitance Coss VDS = -15 V, VGS = 0 V, f = 1 MHz - 150 - pF Reverse transfer capacitance Crss - 130 - VDS = -15 V, VGS = -10 V, ID = -5.4 A - 24 36 Total gate charge Qg - 11.4 17 nC Gate-source charge Qgs VDS = -15 V, VGS = -4.5 V, ID = -5.4 A - 3.4 - Gate-drain charge Qgd - 3.8 - Gate resistance Rg f = 1 MHz 1.5 7.7 15.4 Turn-on delay time td(on) - 13 20 Rise time tr V - 4 8 DD = -15 V, RL = 3.5 I Turn-off delay time t D  -4.3 A, VGEN = -10 V, Rg = 1 d(off) - 38 57 Fall time tf - 6 12 ns Turn-on delay time td(on) - 28 42 Rise time tr V - 16 24 DD = -15 V, RL = 3.5 I Turn-off delay time t D  -4.3 A, VGEN = -4.5 V, Rg = 1 d(off) - 30 45 Fall time tf - 10 20
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - -2.1 A Pulse diode forward current (t = 100 μs) ISM - - -80 Body diode voltage VSD IS = -4.3 A, VGS = 0 V - -0.8 -1.2 V Body diode reverse recovery time trr - 15 23 ns Body diode reverse recovery charge Qrr I - 7 14 nC F = -4.3 A, di/dt = 100 A/μs, T Reverse recovery fall time t J = 25 °C a - 8 - ns Reverse recovery rise time tb - 7 -
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1663-Rev. A, 29-Jul-13
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