PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge ChipPROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 (+DC) 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC) 3.0 x 7.0 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 5,000Å GEOMETRYGROSS DIE PER 3 INCH WAFER 10,000 PRINCIPAL DEVICE TYPES CMFBR-6F R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m
