Datasheet N-Channel 60-V (D-S) MOSFET (Vishay) - 5

Si2337DS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 2.8 2.5 2.4 2.0 ) 2.0 A( tner 1.5 r 1.6 u C r (W) e ni w ar 1.2 o P D 1.0 - I D 0.8 0.5 0.4 0.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C)
Current Derating a Power Derating
10 ) A( tnerruC ehcnalavA kaeP - LI I C T A A BV - VDD 1 1.0E-6 10.0E-6 100.0E-6 1.0E-3 10.0E-3 TA - Time In Avalanche (s)
Single Pulse Avalanche Capability Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0386-Rev. F, 20-May-2019
5
Document Number: 73533 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000