2SK2225 Electrical Characteristics (Ta = 25°C) ItemSymbolMinTypMaxUnitTest conditions Drain to source breakdown voltage V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — 1 A VGS = 20 V, VDS = 0 Zero gate voltage drain current IDSS — — 500 A VDS =1200 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V Static drain to source on state RDS(on) — 9 12 ID = 1 A, VGS = 15 V*3 resistance Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A, VDS = 20 V*3 Input capacitance Ciss — 990 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 125 — pF f = 1 MHz Reverse transfer capacitance Crss — 60 — pF Turn-on delay time td(on) — 17 — ns ID = 1 A, VGS = 10 V, Rise time t RL = 30 r — 50 — ns Turn-off delay time td(off) — 150 — ns Fall time tf — 50 — ns Body to drain diode forward voltage VDF — 0.9 — V IF = 2 A, VGS = 0 Body to drain diode reverse trr — 1750 — ns IF = 2 A, VGS = 0, recovery time diF / dt = 100 A / s Note: 3. Pulse Test R07DS1358EJ0400 Rev.4.00 Page 2 of 6 Dec 06, 2017
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