Datasheet C2M1000170D (Wolfspeed)

V
1700 V
DS I D@ 25˚C
5.0 A
C2M1000170D R
1.0 Ω
DS(on) Silicon Carbide Power MOSFET C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant
Benefits
TO-247-3 • Higher System Efficiency • Increased System Switching Frequency • Reduced Cooling Requirements • Increased System Reliability
Applications
• Auxiliary Power Supplies • Switch Mode Power Supplies • High-voltage Capacitive Loads
Ordering Part Number Package Marking
C2M1000170D TO-247-3 C2M1000170D
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values 5.0 V I GS = 20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 3.5 VGS = 20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 6.0 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 69 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T Operating Junction and Storage Temperature -55 to J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L M Nm d Mounting Torque 1 8.8 lbf-in M3 or 6-32 screw
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C2M1000170D Rev. 7, 02-2021