Datasheet HMC453ST89, 453ST89E (Analog Devices) - 7

HMC453ST89 / 453ST89E
v02.0710
InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Noise Figure Output IP3 vs. Temperature @ 900 MHz vs. Temperature @ 900 MHz
55 10 9 50 8 7 45 6 GURE (dB) 5 +25C 9 40 OIP3 (dBm) +85C 4 SE FI +25C -40C 3 +85C NOI -40C 35 2 1 T 30 0 0.75 0.8 0.85 0.9 0.95 1 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) R - SM
Reverse Isolation Gain, Power & IP3
E
vs. Temperature @ 900 MHz vs. Supply Voltage @ 900 MHz
W 0 55 O 50 -5 45 Gain P1dB +25C Psat -10 +85C 40 OIP3 -40C 35 R & P -15 Psat (dBm), OIP3 (dBm) 30 A E ISOLATION (dB) -20 25 20 IN -25 15 -30 10 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 4.5 4.75 5 5.25 5.5 GAIN (dB), P1dB (dBm), S - L FREQUENCY (GHz) Vs (Vdc) R IE
ACPR vs. Supply Voltage @ 910 MHz
IF
Power Compression @ 900 MHz CDMA IS95, 9 Channels Forward
L 55 -10 P 50 -15 M 45 -20 Pout CDMA IS95 A 40 -25 Gain Frequency: 910 MHz -30 Integration BW: 1.228 MHz 35 PAE Forward Link, 9 Channels -35 30 -40 25 -45 20 ACPR (dBc) 4.5V -50 5V 15 -55 5.5V 10 Pout (dBm), Gain (dB), PAE (%) -60 5 -65 Source ACPR 0 -70 4 6 8 10 12 14 16 18 20 8 10 12 14 16 18 20 22 24 26 INPUT POWER (dBm) Channel Power (dBm) Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m
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