HMC797APM5E v06.0418 GaAs pHEMT MMIC1 WATT POWER AMPLIFIER, DC - 22 GHzTypical ApplicationsFeatures The HMC797APM5E is ideal for: High P1dB Output Power: +29 dBm T • Test Instrumentation High Psat Output Power: +31 dBm M • Military & Space High Gain: 15 dB • Fiber Optics High Output IP3: +41 dBm R - S Supply Voltage: +10 V @ 400 mA E 50 Ohm Matched Input/Output W 32 Lead 5x5 mm SMT Package: 25 mm² O Functional DiagramGeneral Description R & P The HMC797APM5E is a GaAs MMIC pHEMT Dis- A tributed Power Amplifier which operates between DC E and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 IN dBm of saturated output power, and 25% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797APM5E is ideal for high S - L R linearity applications in military and space as well as test equipment where high order modulations are used. This IE versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equip- LIF ment applications. The HMC797APM5E amplifier I/Os P are internal y matched to 50 Ohms facilitating integration M into mutli-chip-modules (MCMs), is packaged in a lead- 1A less QFN 5x5 mm surface mount package, and requires no external matching components. Electrical Specifications, T = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 400 mA*A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 12 12 - 18 18 - 22 GHz Gain 12.5 14.5 13 15 13 15.5 dB Gain Flatness ±0.7 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.014 0.018 0.02 dB/ °C Input Return Loss 15 15 15 dB Output Return Loss 13 15 13 dB Output Power for 1 dB Compression (P1dB) 27 29 27 29 26 29 dBm Saturated Output Power (Psat) 31 31 31 dBm Output Third Order Intercept (IP3) *Measurement taken at Pout/Tone = + 18 42 41 41 dBm dBm Noise Figure 3.0 3.5 4 dB Supply Current (Idd) 400 400 400 mA Supply Voltage (Vdd) 8 10 11 8 10 11 8 10 11 V * Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical, Vgg1 = -0.55V Typical to achieve Idd = 400 mA. I F nf o or r p mati roic n e fu , d rnis e h leiv d e b ry y , a Analn o d t g D o p evic leac s i e o s bel rid ev e e rs d t : A o b n e a a lco c g D urat e e a v n ic d re elsi, I abl n e c . H , O owe n vee T r, n e o chn F o o lo r p g ri y W ce a , d y el, P ive.O ry . B , anox 9 d t 10 o pl 6 a , N c o e orrw de o r o s d, M : Anal A 0 o 2 g D 0 e 6 vi 2 c - e 9 s 10 , I 6 nc., responsibility is assumed by Analog Devices for it P s u h se on , no er f: 78 or an 1- y i 3 nfr2in9g-e4 m 7 e 0 nt 0 • O s of paterd nt e s or o r ot n h leir rights of third parties that may result from its use. Specifications subject to change without notice. No ne a O t w n w e Te w ch.a n n ol a o lgog. y Wcao y m , P.O. Box 9106, Norwood, MA 02062-9106 1 license is granted by implication or otherwise under an A y pa p te p n li t o ca r p t atio enn S t rig u ht pp s o o f A rnta: P lo h g D o e n vi e ce : 1 s. -80 P 0 ho -A ne NA : 7 L 81 O -3 G 2 - 9-D4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain & Return Loss Absolute Maximum Ratings Outline Drawing Package Information Pin Descriptions Evaluation PCB List of Materials Application Circuit
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