link to page 9 Data SheetHMC903LP3ETHEORY OF OPERATION The HMC903LP3E is a gal ium arsenide (GaAs), monolithic The HMC903LP3E has single-ended input and output ports microwave integrated circuit (MMIC), pseudomorphic (pHEMT), whose impedances are nominally equal to 50 Ω over the 6 GHz low noise amplifier. The HMC903LP3E amplifier uses two gain to 17 GHz frequency range. Consequently, it can directly insert stages in series, and the basic schematic of the amplifier is shown in into a 50 Ω system with no required impedance matching Figure 21, which forms a low noise amplifier operating from 6 GHz circuitry, which also means that multiple HMC903LP3E to 17 GHz with excellent noise figure performance. amplifiers can be cascaded back to back without the need for V external matching circuitry. DD1VDD2 The input and output impedances are sufficiently stable vs. RFINRFOUT variations in temperature and supply voltage that no impedance matching compensation is required. 021 VGG1VGG2 14479- Note that it is critical to supply very low inductance ground Figure 21. Basic Schematic of the Amplifier connections to the GND pins and to the package base exposed pad to ensure stable operation. To achieve optimal performance from the HMC903LP3E and to prevent damage to the device, do not exceed the absolute maximum ratings. Rev. I | Page 9 of 13 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 6 GHz to 16 GHz Frequency Range 16 GHz to 17 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Recommended Bias Sequence During Power Up Recommended Bias Sequence During Power Down Evaluation PCB Typical Application Circuits Outline Dimensions Ordering Guide
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