Datasheet HMC8402 (Analog Devices)

2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier Data Sheet HMC8402 FEATURES GENERAL DESCRIPTION Output power for 1 dB compression (P1dB): 21.5 dBm typical
The HMC8402 is a gallium arsenide (GaAs), pseudomorphic
Saturated output power (PSAT): 22 dBm typical
high electron mobility transistor (pHEMT), monolithic microwave
Gain: 13.5 dB typical
integrated circuit (MMIC), low noise amplifier which operates
Noise figure: 2 dB
between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of
Output third order intercept (IP3): 26 dBm typical
gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of
Supply voltage: 7 V at 68 mA
output power at 1 dB gain compression while requiring 68 mA
50 Ω matched input/output
from a 7 V supply. The HMC8402 is self biased with only a single
Die size: 2.7 mm × 1.363 mm × 0.05 mm
positive supply needed to achieve a drain current IDQ of 68 mA.
APPLICATIONS
The HMC8402 amplifier input/outputs are internal y matched to
Test instrumentation
50 Ω facilitating integration into multichip modules (MCMs). All
Microwave radios and very small aperture terminals (VSATs)
data is taken with the chip connected via two 0.025 mm (1 mil)
Military and space
wire bonds of minimal length 0.31 mm (12 mils).
Telecommunications infrastructure Fiber optics FUNCTIONAL BLOCK DIAGRAM 3 DD HMC8402 V 4 RFOUT VGG2 2 1 RFIN
001 13853- Figure 1.
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Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS 2 GHz TO 18 GHz FREQUENCY RANGE 18 GHz TO 26 GHz FREQUENCY RANGE 26 GHz TO 30 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION BIASING PROCEDURES MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE