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Datasheet HMC8325 (Analog Devices) - 6

ПроизводительAnalog Devices
Описание71 GHz to 86 GHz, E-Band Low Noise Amplifier
Страниц / Страница16 / 6 — HMC8325. Data Sheet. TYPICAL PERFORMANCE CHARACTERISTICS. A = +85°C. TA = …
Формат / Размер файлаPDF / 310 Кб
Язык документаанглийский

HMC8325. Data Sheet. TYPICAL PERFORMANCE CHARACTERISTICS. A = +85°C. TA = +25°C. TA = –55°C. B) d. ( S. dB (. URN L T. FIGU. –10. OIS N. N AND RE

HMC8325 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS A = +85°C TA = +25°C TA = –55°C B) d ( S dB ( URN L T FIGU –10 OIS N N AND RE

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HMC8325 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 30 10 25 T 9 A = +85°C TA = +25°C 20 TA = –55°C 8 B) d 15 ( S ) 7 S 10 O dB ( 5 E 6 R URN L T 0 5 FIGU –5 E 4 –10 OIS N N AND RE 3 AI –15 G 2 –20 GAIN –25 INPUT RETURN LOSS 1 OUTPUT RETURN LOSS –30 0
1 1 0
65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90
008
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 FREQUENCY (GHz) FREQUENCY (GHz)
14692- 14692- Figure 8. Gain and Return Loss vs. Frequency, V Figure 11. Noise Figure vs. Frequency over Temperature, Dx = 3 V, IDx = 57 mA VDx = 3 V, IDx = 50 mA
20 20 T T 19 A = +85°C 18 A = +85°C T TA = +25°C A = +25°C T TA = –55°C A = –55°C 16 18 14 17 Bm) d 12 16 B ( Bm) d 1d 10 ( 15 P AT S UT P 14 P 8 UT O 6 13 4 12 2 11 0 10
012
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
009
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 FREQUENCY (GHz) FREQUENCY (GHz)
14692- 14692- Figure 9. Output P1dB vs. Frequency over Temperature, Figure 12. Saturated Output Power (PSAT) vs. Frequency over Temperature, V V Dx = 3 V, IDx = 50 mA Dx = 3 V, IDx = 50 mA
10 –40 –42 T TA = +85°C 8 A = +85°C T TA = +25°C A = +25°C –44 T TA = –55°C A = –55°C 6 ) –46 B 4 (d –48 N IO –50 Bm) 2 T d A L –52 3 ( P 0 I SO –54 UT –2 SE I –56 INP –58 –4 EVER R –60 –6 –62 –8 –64 –10 –66
013
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
010
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 FREQUENCY (GHz) FREQUENCY (GHz)
14692- 14692- Figure 10. Input Third-Order Intercept (IP3) vs. Frequency over Temperatures, Figure 13. Reverse Isolation vs. Frequency over Temperature, P V OUT = 5 dBm/Tone, VDx = 3 V, IDx = 50 mA Dx = 3 V, IDx = 57 mA Rev. 0 | Page 6 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATION INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
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