Datasheet Si4466DY (Vishay)

Si4466DY
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Definition
0.009 at VGS = 4.5 V 13.5 20 • TrenchFET® Power MOSFETs 0.013 at VGS = 2.5 V 11 • Compliant to RoHS Directive 2002/95/EC D
SO-8
1 8 S D 2 7 S D G 3 6 S D 4 5 G D T op V i e w S
Ordering Information:
Si4466DY-T1-E3 (Lead (Pb)-free) Si4466DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 TA = 25 °C 13.5 9.5 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C 10.5 7.5 A Pulsed Drain Current IDM 50 Continuous Source Current (Diode Conduction)a IS 2.7 1.36 TA = 25 °C 3.0 1.5 Maximum Power Dissipationa PD W TA = 70 °C 1.9 0.95 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t ≤ 10 s 33 42 Maximum Junction-to-Ambienta RthJA Steady State 70 84 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21 Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 71820 www.vishay.com S09-0767-Rev. F, 04-May-09 1