Datasheet IQE013N04LM6CG (Infineon)
| Производитель | Infineon |
| Описание | OptiMOS Power-MOSFET, 40V |
| Страниц / Страница | 13 / 1 — IQE013N04LM6CG. MOSFET OptiMOSTMPower-MOSFET,40V. Features. … |
| Версия | 02_00 |
| Формат / Размер файла | PDF / 1.4 Мб |
| Язык документа | английский |
IQE013N04LM6CG. MOSFET OptiMOSTMPower-MOSFET,40V. Features. Productvalidation. Table1KeyPerformanceParameters. Parameter. Value. Unit
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Текстовая версия документа
IQE013N04LM6CG MOSFET OptiMOSTMPower-MOSFET,40V
PG-TTFN-9-1 1
Features
2 3 4 •Optimizedforsynchronousrectification 9 •Verylowon-stateresistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel 8 •Pb-freeleadplating;RoHScompliant 7 6 5 •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 5-8
Table1KeyPerformanceParameters
Gate Pin 9
Parameter Value Unit
Source VDS 40 V Pin 1-4 RDS(on),max 1.35 mΩ ID 205 A Qoss 45 nC Qg(0V..10V) 41 nC
Type/OrderingCode Package Marking RelatedLinks
IQE013N04LM6CG PG-TTFN-9-1 01304C6 - Final Data Sheet 1 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer
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