Datasheet AMP04 (Analog Devices) - 3

AMP04 AMP04E AMP04F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
NOISE Noise Voltage Density, RTI eN f = 1 kHz, G = 1 270 270 nV/√Hz f = 1 kHz, G = 10 45 45 nV/√Hz f = 100 Hz, G = 100 30 30 nV/√Hz f = 100 Hz, G = 1000 25 25 nV/√Hz Noise Current Density, RTI iN f = 100 Hz, G = 100 4 4 pA/√Hz Input Noise Voltage eN p-p 0.1 Hz to 10 Hz, G = 1 7 7 µV p-p 0.1 Hz to 10 Hz, G = 10 1.5 1.5 µV p-p 0.1 Hz to 10 Hz, G = 100 0.7 0.7 µV p-p DYNAMIC RESPONSE Small Signal Bandwidth BW G = 1, –3 dB 300 300 kHz POWER SUPPLY Supply Current ISY 550 700 700 µA –40°C ≤ TA ≤ +85°C 850 850 µA Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS (VS = 15 V, VCM = 0 V, TA = 25 C unless otherwise noted) AMP04E AMP04F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
OFFSET VOLTAGE Input Offset Voltage VIOS 80 400 600 µV –40°C ≤ TA ≤ +85°C 600 900 µV Input Offset Voltage Drift TCVIOS 3 6 µV/°C Output Offset Voltage VOOS 1 3 6 mV –40°C ≤ TA ≤ +85°C 6 9 mV Output Offset Voltage Drift TCVOOS 30 50 µV/°C INPUT CURRENT Input Bias Current IB 17 30 40 nA –40°C ≤ TA ≤ +85°C 50 60 nA Input Bias Current Drift TCIB 65 65 pA/°C Input Offset Current IOS 2 5 10 nA –40°C ≤ TA ≤ +85°C 15 20 nA Input Offset Current Drift TCIOS 28 28 pA/°C INPUT Common-Mode Input Resistance 4 4 GΩ Differential Input Resistance 4 4 GΩ Input Voltage Range VIN –12 +12 –12 +12 V Common-Mode Rejection CMR –12 V ≤ VCM ≤ +12 V G = 1 60 80 55 dB G = 10 80 100 75 dB G = 100 90 105 80 dB G = 1000 90 105 80 dB Common-Mode Rejection CMR –11 V ≤ VCM ≤ +11 V –40°C ≤ TA ≤ +85°C G = 1 55 50 dB G = 10 75 70 dB G = 100 85 75 dB G = 1000 85 75 dB Power Supply Rejection PSRR ±2.5 V ≤ VS ≤ ±18 V –40°C ≤ TA ≤ +85°C G = 1 75 70 dB G = 10 90 80 dB G = 100 95 85 dB G = 1000 95 85 dB REV. C –3–