FS8205 6. Thermal Data Symbol Parameter Rthj-a 7. Value Thermal Resistance Junction-ambient3 Max. Unit 125 ℃/W Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RT P r R ro U ef pe NE er rti ’ en es ce O nl y Static Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 -V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA -0.1 -V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS = 4.5V, ID = 4A -23 28 mΩ VGS = 2.5V, ID = 3A -30 37 mΩ VGS(th) IDSS IGSS 8. Gate Threshold Voltage VDS = VGS, ID = 250uA 0.45 -1.2 V Drain-Source Leakage Current (Tj = 25℃) VDS =16V, VGS = 0V -1 uA Drain-Source Leakage Current (Tj = 70℃) VDS =16V, VGS = 0V -25 uA Gate-Source Leakage VGS = ±10V -±0.1 uA Min. -Typ. -Max. 0.83 1.2 Units A V Source-Drain Diode Parameter Continuous Source Current (Body Diode) Forward On Voltage2 Test Conditions VD = VG = 0V, VS = 1.2V Tj = 25℃, IS = 1.25A, VGS = 0V FO Symbol IS VSD Notes： Fo 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300us, duty cycle ≦ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board；208℃/W when mounted on Min. copper pad. Rev. 1.9 4/4
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