Datasheet IGLD60R190D1 (Infineon) - 6

IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Table 7 Gate charge characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
I Gate charge Q GS = 0 to 3.8 mA; VDS= 400 V; G - 3.2 - nC ID= 5 A
Table 8 Reverse conduction characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
Source-Drain reverse voltage VSD - 2.5 3 V VGS = 0V; ISD = 5 A Pulsed current, reverse IS,pulse - - 23 A IG = 9.6 mA Reverse recovery charge Q 1 rr - 0 - nC ISD = 5 A, VDS = 400V Reverse recovery time trr - 0 - ns Peak reverse recovery current Irrm - 0 - A 1 Excluding Qoss Final Data Sheet 6 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History