Datasheet Si2312CDS (Vishay)

Si2312CDS
www.vishay.com Vishay Siliconix
N-Channel 20 V (D-S) MOSFET FEATURES SOT-23 (TO-236)
• TrenchFET® power MOSFET D • 100% Rg tested 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S
APPLICATIONS
D 1 • DC/DC converters G • Load switch for portable Top View applications
Marking code:
P5
PRODUCT SUMMARY
G VDS (V) 20 RDS(on) max. () at VGS = 4.5 V 0.0318 RDS(on) max. () at VGS = 2.5 V 0.0356 RDS(on) max. () at VGS = 1.8 V 0.0414 S Qg typ. (nC) 8.8 N-Channel MOSFET ID (A) a, e 6 Configuration Single
ORDERING INFORMATION
Package SOT-23 Lead (Pb)-free and halogen-free Si2312CDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 20 V Gate-source voltage VGS ± 8 TC = 25 °C 6 a TC = 70 °C 5.1 Continuous drain current (TJ = 150 °C) ID TA = 25 °C 5 b, c TA = 70 °C 4 b, c A Pulsed drain current IDM 20 TC = 25 °C 1.75 Continuous source-drain diode current IS TA = 25 °C 1.04 b, c TC = 25 °C 2.1 TC = 70 °C 1.3 Maximum power dissipation PD W TA = 25 °C 1.25 b, c TA = 70 °C 0.8 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t  5 s RthJA 80 100 °C/W Maximum junction-to-foot (drain) Steady state RthJF 40 60
Notes
a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 125 °C/W e. Based on TC = 25 °C S10-0641-Rev. A, 22-Mar-10
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Document Number: 65900 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000