Datasheet BC846, BC847, BC848 (ON Semiconductor) - 5

BC846, BC847, BC848 BC846B
600 600 VCE = 1 V V 150°C CE = 5 V 150°C 500 500 400 25°C 400 25°C 300 300 −55°C 200 200 −55°C , DC CURRENT GAIN , DC CURRENT GAIN FE FE h h 100 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector Current Current
0.30 IC/IB = 20 150°C 0.25 AGE (V) 0.20 T OR−EMITTER 25°C 0.15 TION VOL 0.10 , COLLECT TURA −55°C SA 0.05 CE(sat)V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A)
Figure 12. Collector Emitter Saturation Voltage vs. Collector Current
1.1 1.2 1.0 I 1.1 V C/IB = 20 CE = 5 V −55°C AGE (V) 1.0 0.9 T −55°C 25°C 0.9 AGE (V) 0.8 T 0.8 0.7 25°C 150°C 0.7 0.6 0.6 , BASE−EMITTER TION VOL 150°C 0.5 sat) 0.5 BE( TURA V 0.4 , BASE−EMITTER VOL 0.4 SA 0.3 on) 0.3 BE( 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Saturation Voltage vs. Figure 14. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 5