Datasheet BC846ALT1G (ON Semiconductor) - 2
Производитель | ON Semiconductor |
Описание | NPN Bipolar Transistor |
Страниц / Страница | 13 / 2 — BC846ALT1G Series. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. … |
Версия | 17 |
Формат / Размер файла | PDF / 111 Кб |
Язык документа | английский |
BC846ALT1G Series. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
49 предложений от 20 поставщиков Биполярный транзистор, универсальный, NPN, 45 В, 100 мА, 300 мВт, SOT-23, Surface Mount |
| BC847CLT1G Semtech | 0.67 ₽ | |
| BC847CLT1G ON Semiconductor | 0.68 ₽ | |
| BC847CLT1G ON Semiconductor | 2.00 ₽ | |
| BC847CLT1G ON Semiconductor | по запросу | |
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BC846ALT1G Series ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage BC846A, B V(BR)CEO 65 − − V (IC = 10 mA) BC847A, B, C, BC850B, C 45 − − BC848A, B, C, BC849B, C 30 − − Collector − Emitter Breakdown Voltage BC846A, B V(BR)CES 80 − − V (IC = 10 mA, VEB = 0) BC847A, B, C BC850B, C 50 − − BC848A, B, C, BC849B, C 30 − − Collector − Base Breakdown Voltage BC846A, B V(BR)CBO 80 − − V (IC = 10 mA) BC847A, B, C, BC850B, C 50 − − BC848A, B, C, BC849B, C 30 − − Emitter − Base Breakdown Voltage BC846A, B V(BR)EBO 6.0 − − V (IE = 1.0 mA) BC847A, B, C, BC850B, C 6.0 − − BC848A, B, C, BC849B, C 5.0 − − Collector Cutoff Current (VCB = 30 V) ICBO − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A hFE − 90 − − (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B − 150 − BC847C, BC848C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A 110 180 220 BC846B, BC847B, BC848B, 200 290 450 BC849B, BC850B BC847C, BC848C, BC849C, BC850C 420 520 800 Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) − − 0.25 V Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) − 0.7 − V Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) − − 770
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, NF dB VCE = 5.0 Vdc, RS = 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C − − 10 f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C − − 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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