IRF9510S, SiHF9510S Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V Definition DS (V) - 100 • Surface Mount RDS(on) () VGS = - 10 V 1.2 • Available in Tape and Reel Qg (Max.) (nC) 8.7 • Dynamic dV/dt Rating Qgs (nC) 2.2 • Repetitive Avalanche Rated Q • P-Channel gd (nC) 4.1 • 175 °C Operating Temperature Configuration Single • Fast Switching S • Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263)DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides G D the highest power capability and the lowest possible D S on-resistance in any existing surface mount package. The P-Channel MOSFET D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF9510S-GE3 SiHF9510STRL-GE3a IRF9510SPbF IRF9510STRLPbFa Lead (Pb)-free SiHF9510S-E3 SiHF9510STL-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 4.0 Continuous Drain Current VGS at - 10 V ID TC = 100 °C - 2.8 A Pulsed Drain Currenta IDM - 16 Linear Derating Factor 0.29 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 200 mJ Avalanche Currenta IAR - 4.0 A Repetiitive Avalanche Energya EAR 4.3 mJ Maximum Power Dissipation TC = 25 °C 43 PD W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.7 Peak Diode Recovery dV/dtc dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 , IAS = - 4.0 A (see fig. 12). c. ISD - 4.0 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91073 www.vishay.com S11-1050-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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