Si4480EYVishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) ParameterSymbolTest ConditionMinTypbMaxUnitStatic Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 80 V, VGS = 0 V 1 Zero Gate Voltage Drain Current Zero Gate V IDS I S mA VDS = 80 V, VGS = 0 V, TJ = 55_C 20 On-State Drain Currena ID(on) VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 6.2 A 0.026 0.035 Drain Source On State Resistancea Drain-Source On-State Resistance rDS( ) on) W VGS = 6.0 V, ID = 5.8 A 0.030 0.040 Forward Transconductancea gfs VDS = 15 V, ID = 6.2 A 25 S Diode Forward Voltagea VSD IS = 2.1 A, VGS = 0 V 1.2 V Dynamicb Total Gate Charge Qg 30 50 Gate-Source Charge Qgs VDS = 40 V, VGS = 10 V, ID = 6.2 A 9 nC Gate-Drain Charge Qgd 5.6 Gate Resistance Rg 1.5 4.0 W Turn-On Delay Time td(on) 12.5 25 Rise Time tr VDD V = 40 V, R DD = 40 V, L R = 30 L W 12.5 25 = 30 W Turn-Off Delay Time t I d(off) D ^ 1 A, VGEN = 10 V, RG = 6 W 52 80 ns Fall Time tf 22 40 Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 A/ms 50 80 Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output CharacteristicsTransfer Characteristics 40 40 VGS = 10 thru 6 V 32 32 5 V 24 24 16 16 - Drain Current (A) - Drain Current (A) TC = 125_C D D I I 8 8 25_C 4 V - 55_C 0 0 0.0 0.8 1.6 2.4 3.2 4.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com Document Number: 71060 2-2 S-03951—Rev. B, 26-May-03 Document Outline Datasheet Disclaimer Datasheet Disclaimer
