BZT52-Serieswww.vishay.com Vishay Semiconductors
Small Signal Zener Diodes FEATURES• Silicon planar Zener diodes Available • The Zener voltages are graded according to the international E24 standard • AEC-Q101 qualified available • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V
DESIGN SUPPORT TOOLSclick logo to get started • Base P/N-E3 - RoHS-compliant, commercial grade Models • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS PARAMETER VALUE UNITVZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Circuit configuration Single
ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITYBZT52C2V4-E3-08 to BZT52C75-E3-08 BZT52B2V4-E3-08 to BZT52B75-E3-08 3000 (8 mm tape on 7" reel) 15 000/box BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52-series BZT52C2V4-E3-18 to BZT52C75-E3-18 BZT52B2V4-E3-18 to BZT52B75-E3-18 10 000 (8 mm tape on 13" reel) 10 000/box BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18
PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVELMSL level 1 SOD-123 10.3 mg UL 94 V-0 260 °C/10 s at terminals (according J-STD-020)
ABSOLUTE MAXIMUM RATINGS(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNITDiode on ceramic substrate 0.7 mm; P 5 mm2 pad areas tot 500 mW Power dissipation Diode on ceramic substrate 0.7 mm; P 2.5 mm2 pad areas tot 410 mW Zener current See table “Electrical Characteristics “ Valid provided that electrodes are kept at Thermal resistance junction to ambient air R ambient temperature thJA 300 K/W Junction temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Rev. 1.9, 20-Feb-18
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