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Datasheet BZT52 (Vishay)

ПроизводительVishay
ОписаниеSmall Signal Zener Diodes
Страниц / Страница8 / 1 — BZT52-Series. Small Signal Zener Diodes. FEATURES. DESIGN SUPPORT TOOLS. …
Версия1.9
Формат / Размер файлаPDF / 144 Кб
Язык документаанглийский

BZT52-Series. Small Signal Zener Diodes. FEATURES. DESIGN SUPPORT TOOLS. PRIMARY CHARACTERISTICS. PARAMETER. VALUE. UNIT

Datasheet BZT52 Vishay, Версия: 1.9

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Стабилитроны.Тип монтажа: ПоверхностныйКорпус: SOD-123Максимальная мощность (Вт): 0,35Напряжение стабилизации, В: 27Прямое падение напряжения (Vf), В: 0,9Минимальное напряжение стабилизации, В: 26,46Максимальное напряжение стабилизации,...
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BZT52-Series
www.vishay.com Vishay Semiconductors
Small Signal Zener Diodes FEATURES
• Silicon planar Zener diodes Available • The Zener voltages are graded according to the international E24 standard • AEC-Q101 qualified available • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V
DESIGN SUPPORT TOOLS
click logo to get started • Base P/N-E3 - RoHS-compliant, commercial grade Models • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT
VZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Circuit configuration Single
ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZT52C2V4-E3-08 to BZT52C75-E3-08 BZT52B2V4-E3-08 to BZT52B75-E3-08 3000 (8 mm tape on 7" reel) 15 000/box BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52-series BZT52C2V4-E3-18 to BZT52C75-E3-18 BZT52B2V4-E3-18 to BZT52B75-E3-18 10 000 (8 mm tape on 13" reel) 10 000/box BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18
PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL
MSL level 1 SOD-123 10.3 mg UL 94 V-0 260 °C/10 s at terminals (according J-STD-020)
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Diode on ceramic substrate 0.7 mm; P 5 mm2 pad areas tot 500 mW Power dissipation Diode on ceramic substrate 0.7 mm; P 2.5 mm2 pad areas tot 410 mW Zener current See table “Electrical Characteristics “ Valid provided that electrodes are kept at Thermal resistance junction to ambient air R ambient temperature thJA 300 K/W Junction temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Rev. 1.9, 20-Feb-18
1
Document Number: 85760 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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