Datasheet LT1101 (Analog Devices) - 5

LT1101
ELECTRICAL CHARACTERISTICS VS =
±
15V, VCM = 0V, Gain = 10 or 100, 0
°
C
≤
TA
≤
70
°
C, unless otherwise noted. LT1101AC LT1101C/S SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
GE Gain Error G = 100, VO = ±10V, RL = 50k 0.012 0.055 0.014 0.080 % G = 100, VO = ±10V, RL = 2k 0.018 0.085 0.020 0.100 % G = 10, VO = ±10V, RL = 50k or 2k 0.009 0.055 0.010 0.080 % TCGE Gain Error Drift G = 100, RL = 50k 1 4 1 5 ppm/°C (Note 2) G = 100, RL = 2k 2 7 2 9 ppm/°C G = 10, RL = 50k or 5k 1 4 1 5 ppm/°C GNL Gain Nonlinearity G = 100, RL = 50k 9 25 10 35 ppm G = 100, RL = 2k 33 75 36 100 ppm G = 10, RL = 50k or 2k 4 10 4 11 ppm VOS Input Offset Voltage 70 250 85 350 µV LT1101SW 300 800 µV ∆VOS/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C LT1101SW 1.2 4.5 µV/°C lOS Input Offset Current 0.14 0.70 0.17 1.10 nA ∆IOS/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7.0 pA/°C IB Input Bias Current 6 9 6 11 nA ∆IB/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C CMRR Common Mode G = 100, VCM = –14.4V to 13V 98 112 96 112 dB Rejection Ratio G = 100, VCM = –13V to 11.5V 82 100 80 99 dB PSRR Power Supply VS = 2.5, –0.1V to ±18V 100 112 97 112 dB Rejection Ratio IS Supply Current 98 148 100 170 µA VO Maximum 0utput RL = 50k ±12.5 ±14.1 ±12.5 ±14.1 V Voltage Swing RL = 2k ±10.5 ±13.0 ±10.5 ±13.0 V 1101fa 5