LT1022 ELECTRICAL CHARACTERISTICS VS = ± 15V, TA = 25 ° C, VCM = 0V unless otherwise noted.LT1022AMLT1022M, LT1022CHLT1022ACLT1022CN8SYMBOLPARAMETERCONDITIONSMINTYPMAXMINTYPMAXUNITS GBW Gain-Bandwidth Product f = 1MHz 8.5 8.0 MHz IS Supply Current 5.2 7.0 5.2 7.0 mA Settling Time A = +1 or A = –1 10V Step to 0.05% 0.9 0.9 µs 10V Step to 0.02% 1.3 1.3 µs Offset Voltage Adjustment Range RPOT = 100k ±7 ±7 mV The ● denotes the specifications which apply over the full operating temperature range of VCM = 0V, 0 ° C ≤ TA ≤ 70 ° C. VS = ± 15V, unless otherwise noted.LT1022CHLT1022ACLT1022CN8SYMBOLPARAMETERCONDITIONSMINTYPMAXMINTYPMAXUNITS VOS Input Offset Voltage H Package ● 140 480 180 1000 µV (Note 2) N8 Package ● 300 1700 µV Average Temperature H Package ● 1.3 5.0 1.8 9.0 µV/°C Coefficient of Input Offset Voltage N8 Package (Note 6) ● 3.0 15.0 µV/°C IOS Input Offset Current Warmed Up, TA = 70°C ● 15 80 18 100 pA IB Input Bias Current Warmed Up, TA = 70°C ● ±50 ±200 ±60 ±250 pA AVOL Large-Signal Voltage Gain VO = ±10V, RL = 2k ● 80 250 60 250 V/mV CMRR Common Mode Rejection Ratio VCM = ±10.4V ● 85 93 80 91 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±18V ● 86 103 84 101 dB VOUT Output Voltage Swing RL = 2k ● ±12 ±13.1 ±12 ±13.1 V The ● denotes the specifications which apply over the full operating temperature range of – 55 ° C ≤ TA ≤ 125 ° C. VS = ± 15V, VCM = 0V, unless otherwise noted.LT1022AMLT1022MSYMBOLPARAMETERCONDITIONSMINTYPMAXMINTYPMAXUNITS VOS Input Offset Voltage (Note 2) ● 230 750 300 1500 µV Average Temperature (Note 6) ● 1.5 5.0 2.0 9.0 µV/°C Coefficient of Input Offset Voltage IOS Input Offset Current Warmed Up, TA = 125°C ● 0.3 2.0 0.30 3.0 nA IB Input Bias Current Warmed Up, TA = 125°C ● ± 0.5 ± 4.0 ± 0.7 ± 6.0 nA AVOL Large Signal Voltage Gain VO = ±10V, RL = 2k ● 40 120 35 120 V/mV CMRR Common-Mode Rejection Ratio VCM = ±10.4V ● 85 92 80 90 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±17V ● 86 102 84 100 dB VOUT Output Voltage Swing RL = 2k ● ±12 ±12.9 ±12 ±12.9 V Note 1: Absolute Maximum Ratings are those values beyond which the Note 4: This parameter is tested on a sample basis only. life of a device may be impaired. Note 5: Current noise is calculated from the formula: in = (2qIB)1/2, where Note 2: Offset voltage is measured under two different conditions: q = 1.6 • 10 –19 coulomb. The noise of source resistors up to 1GΩ swamps (a) approximately 0.5 seconds after application of power; the contribution of current noise. (b) at TA = 25°C, with the chip self-heated to approximately 45°C Note 6: Offset voltage drift with temperature is practically unchanged when to account for chip temperature rise when the device is fully warmed up. the offset voltage is trimmed to zero with a 100k potentiometer between Note 3: 10Hz noise voltage density is sample tested on every lot of A the balance terminals and the wiper tied to V +. Devices tested to tighter grades. Devices 100% tested at 10Hz are available on request. drift specifications are available on request. 1022fa 3
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