LTC5530 WWWUUWUABSOLUTE AXI URATI GSPACKAGE/ORDER I FOR ATIO(Note 1) V ORDER PART CC, VOUT, SHDN, VM .. –0.3V to 6.5V RF NUMBER IN Voltage .. (VCC ± 1.5V) to 7V TOP VIEW RFIN Power (RMS) .. 12dBm LTC5530ES6 RF 6 V I IN 1 CC VOUT .. 5mA GND 2 5 VOUT Operating Temperature Range (Note 2) .. – 40°C to 85°C SHDN 3 4 VM Maximum Junction Temperature ... 125°C S6 PART S6 PACKAGE Storage Temperature Range .. – 65°C to 150°C 6-LEAD PLASTIC TSOT-23 MARKING Lead Temperature (Soldering, 10 sec).. 300°C TJMAX = 125°C, θJA = 250°C/W LBDX Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operatingtemperature range, otherwise specifications are at TA = 25 ° C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,RA = RB = 1k, SHDN = HI unless otherwise noted.PARAMETERCONDITIONSMINTYPMAXUNITS VCC Operating Voltage ● 2.7 6 V IVCC Operating Current IVOUT = 0mA ● 0.5 0.7 mA IVCC Shutdown Current SHDN = LO ● 0.01 2 µA VOUT (No RF Input) RLOAD = 2k ● 85 100 to 140 155 mV SHDN = LO 1 mV VOUT Output Current VOUT = 1.75V, VCC = 2.7V, ∆VOUT < 10mV ● 2 4 mA VOUT Enable Time SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k ● 8 20 µs VOUT Bandwidth CLOAD = 33pF, RLOAD = 2k (Note 4) 2 MHz VOUT Load Capacitance (Notes 6, 7) ● 33 pF VOUT Slew Rate VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) 3 V/µs VOUT Noise VCC = 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination 1 mVP-P VM Voltage Range ● 0 VCC – 1.8V V VM Input Current ● –0.5 0.5 µA SHDN Voltage LO, Chip Disabled VCC = 2.7V to 6V ● 0.35 V SHDN Voltage HI, Chip Enabled VCC = 2.7V to 6V ● 1.4 V SHDN Input Current SHDN = 3.6V ● 22 36 µA RFIN Input Frequency Range (Note 8) 300 to 7000 MHz RFIN Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V –32 to 10 dBm RFIN AC Input Resistance F = 1000MHz, Pin = –25dBm 220 Ω RFIN Input Shunt Capacitance F = 1000MHz, Pin = –25dBm 0.65 pF Note 1: Absolute Maximum Ratings are those values beyond which the life equation: BW = 0.35/rise time. of a device may be impaired. Note 5: RF performance is tested at 1800MHz Note 2: Specifications over the –40°C to 85°C operating temperature Note 6: Guaranteed by design. range are assured by design, characterization and correlation with Note 7: Capacitive loading greater than this value may result in circuit statistical process controls. instability. Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. Note 8: Higher frequency operation is achievable with reduced Note 4: Bandwidth is calculated based on the 10% to 90% rise time performance. Consult factory for more information. 5530f 2
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