Datasheet STE70NM60 - STMicroelectronics Даташит Полевой транзистор N CH 600 В 70 А ISOTOP — Даташит
Наименование модели: STE70NM60
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Подробное описание
Производитель: STMicroelectronics
Описание: Полевой транзистор N CH 600 В 70 А ISOTOP
Краткое содержание документа:
STE70NM60
N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmeshTMPower MOSFET
TYPE STE70NM60 VDSS 600V RDS(on) < 0.055 ID 70 A
TYPICAL RDS(on) = 0.050 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST ON-RESISTANCE DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
ISOTOP
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 30 А
- Drain Source Voltage Vds: 600 В
- On State Resistance: 50 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Voltage Vgs Max: 30 В
- Рабочий диапазон температрур: -65°C ... +150°C
- Корпус транзистора: ISOTOP
- Количество выводов: 4
- SVHC: No SVHC (15-Dec-2010)
- Current Id Max: 70 А
- Тип корпуса: ISOTOP
- Power Dissipation Pd: 600 Вт
- Способ монтажа: Screw
- Threshold Voltage Vgs Typ: 4 В
- Тип транзистора: Power MOSFET
- Voltage Vds Typ: 600 В
- Voltage Vgs Rds on Measurement: 10 В
RoHS: есть