Datasheet MMSF3P02HDR2G - ON Semiconductor Даташит P CHANNEL полевой транзистор, -20 В, 5.6 А, SOIC — Даташит
Наименование модели: MMSF3P02HDR2G
 Купить MMSF3P02HDR2G на РадиоЛоцман.Цены — от 22 до 405 ₽15 предложений от 11 поставщиков MOSFET PFET SO8S 20V 5.6A 75mOhm | |||
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| MMSF3P02HDR2G ON Semiconductor | 60 ₽ | ||
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Подробное описание
Производитель: ON Semiconductor
Описание: P CHANNEL полевой транзистор, -20 В, 5.6 А, SOIC
Скачать Data SheetКраткое содержание документа:
MMSF3P02HD
Preferred Device
Power MOSFET 3 Amps, 20 Volts
P-Channel SO-8
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Спецификации:
- Полярность транзистора: P Channel
- Continuous Drain Current Id: 5.6 А
- Drain Source Voltage Vds: 20 В
- On Resistance Rds(on): 60 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Threshold Voltage Vgs Typ: 1.5 В
RoHS: есть
