Datasheet IKB20N60T - Infineon Даташит IGBT+ DIODE,600V,20A,TO263 — Даташит
Наименование модели: IKB20N60T
Купить IKB20N60T на РадиоЛоцман.Цены — от 120 до 332 ₽ 20 предложений от 11 поставщиков Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin | |||
| IKB20N60T | от 120 ₽ | ||
| IKB20N60T Infineon | 259 ₽ | ||
| IKB20N60T Infineon | 316 ₽ | ||
| IKB20N60T Infineon | по запросу | ||
Подробное описание
Производитель: Infineon
Описание: IGBT+ DIODE,600V,20A,TO263
Скачать Data SheetКраткое содержание документа:
TrenchStop® Series
IKB20N60T p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 20A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking K20T60 Package PG-TO263-3-2
C
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 20 А
- Collector Emitter Voltage Vces: 2.05 В
- Power Dissipation Max: 166 Вт
- Collector Emitter Voltage V(br)ceo: 600 В
- Operating Temperature Range: -40°C to +175°C
- Корпус транзистора: TO-263
- Количество выводов: 3
RoHS: есть
