Datasheet HGTG20N60B3D - Fairchild Даташит IGBT, TO-247 — Даташит
Наименование модели: HGTG20N60B3D
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Подробное описание
Производитель: Fairchild
Описание: IGBT, TO-247
Краткое содержание документа:
HGTG20N60B3D
Data Sheet December 2001
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016.
Features
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 40 А
- Collector Emitter Voltage Vces: 2 В
- Power Dissipation Max: 165 Вт
- Collector Emitter Voltage V(br)ceo: 600 В
- Корпус транзистора: TO-247
- Количество выводов: 3
- SVHC: No SVHC (18-Jun-2010)
- Alternate Case Style: SOT-249
- Current Ic Continuous a Max: 40 А
- Current Temperature: 25°C
- Device Marking: HGTG20N60B3D
- Fall Time tf: 200 нс
- Full Power Rating Temperature: 25°C
- Количество транзисторов: 1
- Package / Case: TO-247
- Pin Configuration: With flywheel diode
- Power Dissipation: 165 Вт
- Power Dissipation Pd: 165 Вт
- Pulsed Current Icm: 160 А
- Rise Time: 20 нс
- SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
- Termination Type: Through Hole
- Полярность транзистора: N Channel
- Voltage Vces: 600 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5